Plasma system comprising hollow mesh plate electrode
US5304250A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1992 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Jul 7, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma system which eliminates damage derived from charged particles in the plasma and which is able to perform uniform plasma CVD and plasma etching on a large area substrate, wherein a mesh plate having a plurality of holes is placed at the interface of a plasma generation chamber and a substrate treatment chamber which holds a substrate, a high frequency electrical field being applied between an upper electrode in the plasma generation chamber and the mesh plate so as to disassociate the plasma forming gas by electrodischarge so as to cause the generation of plasma. By this, the plasma is isolated from the substrate. On the other hand, source gas supply ports are opened near the holes of the mesh plate, the source gas being introduced from there being brought into contact with the plasma through the holes, whereby the reaction product can be uniformly produced in a broad area. If the reaction product is a deposit-like substance, plasma CVD becomes possible, while if of the etching type, plasma etching becomes possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.