Lithography system using charged-particle beam and method of using the same
US5304811A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1992 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Jun 11, 2012 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lithography system and a method of using the same, wherein a charged-particle beam is deflected to pass through a selected block of stencil pattern on a stencil mask and thereafter the beam forms an image of the stencil pattern on an objective, the lithography system comprising astigmatism and focus compensation coils disposed on both the upstream and downstream sides of the stencil mask, thereby aberration of the incident beam onto the stencil mask being corrected by the astigmatism and focus compensation coils disposed on the upstream side forming a sharp image on the mask, and further aberration of the mask-penetrated beam on the downstream side being corrected by the astigmatism and focus compensation coils disposed on the downstream side forming a sharp image of the stencil pattern on the objective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.