Magnetoresistance effect element and magnetoresistance effect sensor
US5304975A · kind A · utility
78Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 1992 |
| Grant date | Apr 19, 1994 |
| Priority date | — |
| Expiry date | Oct 22, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/3996
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.