Yoshiaki Saito
189Patents
23h-index
113Co-inventors
93Inventor score
Filing activity: Jul 3, 1984 → Jul 8, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6611405B1 | Magnetoresistive element and magnetic memory device | Emerging Cross-Sectional Technologies | 118 | Expired |
| US6765824B2 | Magneto-resistance element capable of controlling the position and size of edge domain and the coercivity and magnetic memory | Physics | 113 | Expired |
| US6995962B2 | Ferromagnetic double tunnel junction element with asymmetric energy band | Physics | 107 | Expired |
| US5304975A | Magnetoresistance effect element and magnetoresistance effect sensor | Physics | 78 | Expired |
| US6069820A | Spin dependent conduction device | Electricity | 76 | Expired |
| US6473336B2 | Magnetic memory device | Electricity | 75 | Expired |
| US6365286B1 | Magnetic element, magnetic memory device, magnetoresistance effect head, and magnetic storage system | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6381171B1 | Magnetic element, magnetic read head, magnetic storage device, magnetic memory device | Physics | 59 | Expired |
| US6751074B2 | Magnetic memory having antiferromagnetically coupled recording layer | Emerging Cross-Sectional Technologies | 59 | Expired |
| US6522573B2 | Solid-state magnetic memory using ferromagnetic tunnel junctions | Physics | 53 | Expired |
| US6807091B2 | Magnetic switching element and a magnetic memory | Electricity | 51 | Expired |
| US8357962B2 | Spin transistor and method of manufacturing the same | Electricity | 46 | Active |
| US7663171B2 | Magneto-resistance effect element and magnetic memory | Electricity | 45 | Active |
| US6556473B2 | Magnetic memory with reduced write current | Electricity | 39 | Expired |
| US6728619B2 | Failure measure outputting method, output system, and output device | Physics | 36 | Expired |
| US6907384B2 | Method and system for managing construction machine, and arithmetic processing apparatus | Physics | 34 | Expired |
| US6114056A | Magnetic element, and magnetic head and magnetic memory device using thereof | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6605836B2 | Magnetoresistance effect device, magnetic memory apparatus, personal digital assistance, and magnetic reproducing head, and magnetic information | Emerging Cross-Sectional Technologies | 32 | Expired |
| US6832175B2 | Method for managing construction machine, and arithmetic processing apparatus | Physics | 30 | Expired |
| US5145734A | Woven fabric high-purity alumina continuous filament, high-purity alumina filament for production thereof, and processes for production of woven fabric and continuous filament | Emerging Cross-Sectional Technologies | 28 | Expired |
| US7307302B2 | Magneto-resistive effect element and magnetic memory | Electricity | 27 | Expired |
| US7746601B2 | Magneto-resistance effect element with a surface contacting with a side face of electrode having a magnetization direction | Physics | 24 | Active |
| US6801414B2 | Tunnel magnetoresistance effect device, and a portable personal device | Electricity | 24 | Expired |
| US7394684B2 | Spin-injection magnetic random access memory | Physics | 23 | Active |
| US6590803B2 | Magnetic memory device | Physics | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.