Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas
US5306672A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 1992 |
| Grant date | Apr 26, 1994 |
| Priority date | — |
| Expiry date | Oct 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a gate oxide film of a high reliability and a superior performance applicable to a very-large-scale integrated circuit and a manufacturing equipment for the same are disclosed. The method includes steps for treating a substrate with a HF solution, then treating with a HF gas, and subsequently treating with H.sub.2 gas of a high purity, and oxidizing the substrate. The step of the H.sub.2 gas treatment is carried out at a temperature equal to or above 200.degree. C. and at a pressure equal to or below 10 Torr. The manufacturing equipment comprises loading-lock chambers between a HF gas treatment chamber and a H.sub.2 gas treatment chamber and between the H.sub.2 gas treatment chamber and a thermal oxidation chamber for avoiding exposure of the substrate to the air during transferring the substrate between the chambers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.