Temperature controlled process for the epitaxial growth of a film of material
US5308788A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1993 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | Apr 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A ramp activated low temperature quality epitaxial growth process. A substrate is pre-conditioned and a passivation layer overlying the substrate surface is formed. The substrate is introduced into a process chamber having a controlled temperature. A process chamber purge technique is used to remove oxygen and contaminants from the process chamber before epitaxial growth begins. A process gas, which has an epitaxial growth species, a process chamber purging species and other possible species, is introduced into the process chamber at a low temperature. The process gas and the passivation layer keep the process chamber environment and the substrate surface free from contamination and free from native oxide growth before and, in some cases, during epitaxial growth. The process chamber temperature is gradually elevated to initiate a quality epitaxial growth by starting growth relative to decomposition of the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.