Inventor · Austin, TX, US

Carlos Mazure

81Patents
26h-index
55Co-inventors
91Inventor score

Filing activity: Oct 12, 1990 → Sep 16, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US5308782A Semiconductor memory device and method of formation Electricity 394 Expired
US5308788A Temperature controlled process for the epitaxial growth of a film of material Electricity 292 Expired
US5219793A Method for forming pitch independent contacts and a semiconductor device having the same Emerging Cross-Sectional Technologies 137 Expired
US5398200A Vertically formed semiconductor random access memory device Emerging Cross-Sectional Technologies 120 Expired
US5612563A Vertically stacked vertical transistors used to form vertical logic gate structures Electricity 110 Expired
US5414289A Dynamic memory device having a vertical transistor Electricity 89 Expired
US5308778A Method of formation of transistor and logic gates Electricity 83 Expired
US5414288A Vertical transistor having an underlying gate electrode contact Electricity 81 Expired
US5627395A Vertical transistor structure Electricity 77 Expired
US6955971B2 Semiconductor structure and methods for fabricating same Emerging Cross-Sectional Technologies 69 Expired
US5314834A Field effect transistor having a gate dielectric with variable thickness Emerging Cross-Sectional Technologies 68 Expired
US5578850A Vertically oriented DRAM structure Electricity 65 Expired
US5538922A Method for forming contact to a semiconductor device Emerging Cross-Sectional Technologies 63 Expired
US5340754A Method for forming a transistor having a dynamic connection between a substrate and a channel region Electricity 57 Expired
US5451538A Method for forming a vertically integrated dynamic memory cell Electricity 52 Expired
US5324673A Method of formation of vertical transistor Electricity 52 Expired
US6207494A Isolation collar nitride liner for DRAM process improvement Electricity 51 Expired
US5291438A Transistor and a capacitor used for forming a vertically stacked dynamic random access memory cell Electricity 51 Expired
US5061647A ITLDD transistor having variable work function and method for fabricating the same Electricity 50 Expired
US5210435A ITLDD transistor having a variable work function Electricity 43 Expired
US5213989A Method for forming a grown bipolar electrode contact using a sidewall seed Emerging Cross-Sectional Technologies 43 Expired
US5962069A Process for fabricating layered superlattice materials and AB0.sub.3 type metal oxides without exposure to oxygen at high temperatures Electricity 42 Expired
US7018909B2 Forming structures that include a relaxed or pseudo-relaxed layer on a substrate Electricity 29 Expired
US6964914B2 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material Emerging Cross-Sectional Technologies 28 Expired
US5252849A Transistor useful for further vertical integration and method of formation Electricity 26 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.