Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor
US5309108A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 1992 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | Jul 30, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30121
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified. If an image part being equal to the set threshold value or more does not exist in the difference infrared image in the pixel address, a wiring pattern position in the pixel address is detected from a visible image of the pixel address, and this wiring pattern and one from a neighboring …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.