Ridge waveguide semiconductor laser with thin active region
US5309465A · kind A · utility
8Cited by
17References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1992 |
| Grant date | May 3, 1994 |
| Priority date | — |
| Expiry date | Nov 5, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32391
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.