Dry etching method
US5310454A · kind A · utility
35Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 1993 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Mar 4, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.