Polycrystalline silicon rod for floating zone method and process for making the same
US5310531A · kind A · utility
9Cited by
5References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 30, 1992 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Nov 30, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B13/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.