Method for forming a patterned layer using dielectric materials as a light-sensitive material

US5310626A · kind A · utility

Assignee

• Motorola, Inc. · US

Inventors

• Mark G. Fernandes · Austin, US
• Stanley M. Filipiak · Pflugerville, US
• Jeffrey T. Wetzel · Austin, US

Key dates

• Filing date: Mar 1, 1993
• Grant date: May 10, 1994
• Expiry date: Mar 1, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31144
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a patterned layer of material begins by providing a substrate (12). A device layer (14) is formed overlying the substrate (12). A layer (16) is formed over the device layer (14). Layer (16) is further characterized as being an inorganic dielectric material, such as a plasma enhanced silicon nitride (PEN) material. A mask (18) is positioned adjacent the layer (16). Ultra-violet (UV) light (20) is selectively exposed to the layer (16) through the mask (18). Exposure from the UV light (20) forms exposed regions (16b) and unexposed regions (16a) of the layer (16). The UV light (20) alters an atomic bonding energy of hydrogen atoms within the exposed regions (16b) while not altering unexposed regions (16a). The layer (16) is exposed to an etchant which etches the exposed regions (16b) and unexposed regions (16a) at different rates. The etching forms a patterned layer from the layer ( 16) which may be used as a masking layer.