Amorphous SI/SIC heterojunction color-sensitive phototransistor
US5311047A · kind A · utility
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Key dates
| Filing date | Nov 16, 1988 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Nov 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/245
Abstract
An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n.sup.+ -i-p.sup.+)/a-SiC(i-n.sup.+)/Al. The device is a bulk barrier transistor with a wide-bandgap amorphous SiC emitter. The phototransistor revealed a very high optical gain of 40 and a response speed of 10 us at an input light power of 5 uW and a collector current of 0.12 mA at a voltage of 14 V. The peak response occurs at 610 nm under 1 V bias and changes to 420 and 540 nm under 7- and 13-V biases, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.