National Science Council
540Patents
0Active
540Granted
45Portfolio score
Filing activity: Sep 16, 1987 → Jul 19, 2004
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5893741A | Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's | Electricity | 408 | Expired |
| US5220639A | Mandarin speech input method for Chinese computers and a mandarin speech recognition machine | Physics | 251 | Expired |
| US6355502B1 | Semiconductor package and method for making the same | Electricity | 228 | Expired |
| US6217816A | Method for rapid forming of a ceramic work piece | Chemistry; Metallurgy | 128 | Expired |
| US5993726A | Manufacture of complex shaped Cr.sub.3 C.sub.2 /Al.sub.2 O.sub.3 components by injection molding technique | Performing Operations; Transporting | 116 | Expired |
| US5658806A | Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration | Electricity | 107 | Expired |
| US5583073A | Method for producing electroless barrier layer and solder bump on chip | Electricity | 104 | Expired |
| US5705047A | Method for manufacturing porous blue light emitting diode | Emerging Cross-Sectional Technologies | 98 | Expired |
| US6151409A | Methods for compressing and re-constructing a color image in a computer system | Physics | 96 | Expired |
| US5783479A | Structure and method for manufacturing improved FETs having T-shaped gates | Electricity | 81 | Expired |
| US6602338B2 | Titanium dioxide film co-doped with yttrium and erbium and method for producing the same | Chemistry; Metallurgy | 80 | Expired |
| US5943560A | Method to fabricate the thin film transistor | Electricity | 79 | Expired |
| US5643108A | Structure for golf club head and the method of its manufacture | Human Necessities | 78 | Expired |
| US5722420A | EMG biofeedback traction modality for rehabilitation | Human Necessities | 75 | Expired |
| US5821287A | Photochromic pigment | Chemistry; Metallurgy | 67 | Expired |
| US6042714A | Method and chemical sensor for determining concentrations of hydrogen peroxide and its precursor in a liquid | Physics | 65 | Expired |
| US5567638A | Method for suppressing boron penetration in PMOS with nitridized polysilicon gate | Electricity | 63 | Expired |
| US5311047A | Amorphous SI/SIC heterojunction color-sensitive phototransistor | Electricity | 61 | Expired |
| US5781675A | Method for preparing fiber-optic polarizer | Physics | 59 | Expired |
| US6077760A | Structure and method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance characteristics | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5482890A | Method of fabricating quantum dot structures | Emerging Cross-Sectional Technologies | 56 | Expired |
| US5595040A | Beam-to-column connection | Fixed Constructions | 55 | Expired |
| US5635258A | Method of forming a boron-doped diamond film by chemical vapor deposition | Chemistry; Metallurgy | 53 | Expired |
| US6106527A | Vertebral fixing device | Human Necessities | 53 | Expired |
| US5742246A | Stabilizing mechanism for sigma-delta modulator | Electricity | 51 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.