Planar semiconductor component with stepped channel stopper electrode

US5311052A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Jens-Peer Stengl · Hersbruck, DE
• Helmut Strack · Hersbruck, DE
• Jeno Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Sep 29, 1982
• Grant date: May 10, 1994
• Expiry date: Sep 29, 2002

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112

Abstract

Semiconductor component, including a semiconductor body having an edge, a surface, a substrate of a first given conductivity type, at least one zone being embedded in a planar manner in the substrate at the surface and being of a second conductivity type opposite the first given type, and insulating layer disposed on the surface, an electrode being in contact with the at least one zone, a channel stopper disposed on the insulating layer outside the at least one zone and in vicinity of the edge of the semiconductor body, the channel stopper being electrically connected to the substrate, and a field plate beind disposed on the insulating layer between the at least one zone and the channel stopper and being electrically connected to the at least one zone, the channel stopper being disposed at an increasing distance from the edge and the surface of the semiconductor body, as seen in direction toward the at least one zone.