Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation
US5311539A · kind A · utility
8Cited by
16References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1992 |
| Grant date | May 10, 1994 |
| Priority date | — |
| Expiry date | Nov 25, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.