Thermal dissipation of integrated circuits using diamond paths
US5313094A · kind A · utility
102Cited by
19References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Jan 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heat dissipation apparatus for dissipation of thermal energy from an isolated active silicon region to an underlying supportive substrate is disclosed. Such an apparatus comprises a diamond filled trench having walls extending through the isolated active silicon region, an underlying insulative layer, and into the supportive substrate, whereby said diamond filled trench provides a high thermal conductive path from said active silicon region to said substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.