Method and apparatus for measuring deviation between patterns on a semiconductor wafer
US5313272A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1992 |
| Grant date | May 17, 1994 |
| Priority date | — |
| Expiry date | Aug 3, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and apparatus for measuring the deviation between elements on an object includes the steps of and devices for performing the steps of forming at least a first physicooptical element on the object: forming at least a second physicooptical element on the object, the first and second physicooptical elements having lens functions; projecting light beams onto the first and second physicooptical elements on the object and detecting the incident positions of light beams travelling from the first and second physicooptical elements, having been subjected to the lens functions of the first and second physicooptical elements, on a predetermined surface; and detecting the deviation between the first and second physicooptical elements on the object from the relationship between the detected incident positions of the light beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.