Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes
US5314569A · kind A · utility
39Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Dec 22, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growth according to which a layer of a material having apertures is made on the surface of a substrate. A material is deposited in each aperture. When this material is liquid, it can absorb the material to be grown. Then, the growth is done in vapor phase. The material of the layer is chosen in such a way that there is neither growth nor nucleation on its surface during the growth in vapor phase. The disclosed method can be applied to the making of crystal whiskers positioned with precision, and to the making of tip type microcathodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.