High resolution, multi-layer resist for microlithography and method therefor
US5314772A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Jun 8, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high resolution, multi-layer resist for use in microlithography and a method is disclosed. The resist consists of a planarized layer deposited onto a substrate and an active layer, consisting of arsenic sulfide and silver is deposited onto the planarized layer. Irradiation with light, or other source of irradiation causes the silver to ionically diffuse into the arsenic sulfide, thereby creating a non-phase separate ternary chalcogenide glass. Removal of either the reacted or unreacted ternary compound will provide a positive or negative mask which may be used in subsequent processing or left as an intermetal dielectric as part of the underlying circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.