Method of and apparatus for evaluating crystal rate in silicon thin film
US5314831A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Oct 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Light in an ultraviolet region is applied to a first sample of single-crystalline silicon substrate and a sample of silicon thin film to be evaluated respectively, to obtain wavelength dependency of a ratio (reflection intensity ratio) K(.lambda.) between reflection light intensity values of the samples. A straight line connecting points indicating reflection intensity values at wavelengths 235 nm and 320 nm is obtained to subtract an actual reflection intensity ratio Kr from a virtual reflection intensity ratio Ki provided by the straight line with respect to a wavelength of 270 nm, thereby obtaining an index .DELTA.Ks. In a similar manner, an index .DELTA.Ka is obtained as to a second sample of silicon which is composed of only true amorphous phases. The degree of non-crystallization of the silicon thin film to be obtained is evaluated by comparing the index .DELTA.Ks with the index .DELTA.Ka.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.