Process for the production of a high voltage MIS integrated circuit

US5314832A · kind A · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Simon Deleonibus · Le Pont-de-Claix, FR

Key dates

• Filing date: Feb 12, 1992
• Grant date: May 24, 1994
• Expiry date: Feb 12, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A process for the production of a high voltage, MIS integrated circuit or a substrate incorporating double implantation MIS transistors creates transistors whose sources and drains consist of double junctions and whose gates are formed in a semiconducting layer. The initial process includes a first implantation of ions of a given conductivity type in the substrate and at a given dose, in order to form there the first source and drain junctions, followed by a second implantation of ions of the same type as the first, at a higher dose than that of the first implantation in order to form the double junctions. The process is characterized in that between the first and second implantations, a conductive layer is epitaxied on said first junctions and on the gates, the second implantation being formed through the epitaxied layer in such a way that the double junctions are partly formed there.