Method of forming a frontside contact to the silicon substrate of a SOI wafer
US5314841A · kind A · utility
31Cited by
12References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 1993 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Apr 30, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of having a frontside contact to a SOI wafer is described. Before any device processing steps a trench is etched through the SOI layers to the substrate. This trench is maintained during device processing and opened during source/drain implantation. At metallization an ohmic contact is made to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.