Thyristor with insulated gate
US5315134A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1992 |
| Grant date | May 24, 1994 |
| Priority date | — |
| Expiry date | Jun 10, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/655
Abstract
A thyristor with an insulated gate includes a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. A drain electrode contacting the p-type base layer is formed adjacent to one side of the n-type emitter layer. An n-type drain layer, which is short-circuited with the p-type base layer by the drain electrode, is formed. An n-type source layer is formed a predetermined distance away from the n-type drain layer. A turn-off insulated gate is formed between the n-type source layer and the n-type drain layer. A source electrode is connected to a cathode electrode. Thereby, turn-off capability of the thyristor can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.