Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits
US5316586A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1992 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Jun 26, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The sample holder of the invention is formed of the same semiconductor crystal as the integrated circuit on which the molecular beam expitaxial process is to be performed. In the preferred embodiment, the sample holder comprises three stacked micro-machined silicon wafers: a silicon base wafer having a square micro-machined center opening corresponding in size and shape to the active area of a CCD imager chip, a silicon center wafer micro-machined as an annulus having radially inwardly pointing fingers whose ends abut the edges of and center the CCD imager chip within the annulus, and a silicon top wafer micro-machined as an annulus having cantilevered membranes which extend over the top of the CCD imager chip. The micro-machined silicon wafers are stacked in the order given above with the CCD imager chip centered in the center wafer and sandwiched between the base and top wafers. The thickness of the center wafer is about 20% less than the thickness of the CCD imager chip. Preferably, four titanium wires, each grasping the edges of the top and base wafers, compress all three wafers together, flexing the cantilever fingers of the top wafer to accommodate the thickness of the CCD im…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.