Inventor · Pasadena, CA, US

Michael E. Hoenk

25Patents
11h-index
35Co-inventors
75Inventor score

Filing activity: Jan 9, 1989 → Feb 9, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6803840B2 Pattern-aligned carbon nanotube growth and tunable resonator apparatus Emerging Cross-Sectional Technologies 260 Expired
US5376810A Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response Electricity 91 Expired
US6756795B2 Carbon nanobimorph actuator and sensor Emerging Cross-Sectional Technologies 80 Expired
US6737939B2 Carbon nanotube array RF filter Emerging Cross-Sectional Technologies 76 Expired
US6685810B2 Development of a gel-free molecular sieve based on self-assembled nano-arrays Emerging Cross-Sectional Technologies 57 Expired
US6403963B1 Delta-doped CCD's as low-energy particle detectors and imagers Electricity 42 Expired
US8163094B1 Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process Electricity 29 Active
US7800040B2 Method for growing a back surface contact on an imaging detector used in conjunction with back illumination Electricity 29 Active
US5739416A Fast, high sensitivity dewpoint hygrometer Physics 21 Expired
US4929041A Cathodoluminescence system for use in a scanning electron microscope including means for controlling optical fiber aperture Electricity 18 Expired
US7786421B2 Solid-state curved focal plane arrays Electricity 15 Active
US7175762B1 Nanocarpets for trapping particulates, bacteria and spores Emerging Cross-Sectional Technologies 10 Expired
US9123622B2 Atomic layer deposition of high performance anti reflection coatings on delta-doped CCDs Emerging Cross-Sectional Technologies 5 Active
US5316586A Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits Chemistry; Metallurgy 4 Expired
US8680637B2 Atomic layer deposition of chemical passivation layers and high performance anti-reflection coatings on back-illuminated detectors Emerging Cross-Sectional Technologies 4 Active
US9165971B2 Atomically precise surface engineering for producing imagers Electricity 4 Active
US8395243B2 Surface passivation by quantum exclusion using multiple layers Electricity 3 Active
US8828852B2 Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays Emerging Cross-Sectional Technologies 2 Active
US9105548B2 Sparsely-bonded CMOS hybrid imager Electricity 2 Active
US8582805B2 Synthetic foveal imaging technology Physics 2 Active
US9739898B2 Subnanosecond scintillation detector Electricity 2 Active
US9024344B2 Surface passivation by quantum exclusion using multiple layers Emerging Cross-Sectional Technologies 1 Active
US10541266B2 Atomically precise surface engineering for producing imagers Electricity 0 Active
US8558234B2 Low voltage low light imager and photodetector Emerging Cross-Sectional Technologies 0 Active
US10078142B2 Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.