Plasma processing apparatus
US5316645A · kind A · utility
28Cited by
8References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 17, 1993 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Feb 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.