Method of forming copper film on substrate
US5316802A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 1992 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Jun 4, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31721
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A copper film coated substrate includes a substrate and a copper film formed on a surface of the substrate. The copper film has an X-ray diffraction intensity of 2.0 cps per unit film thickness at a crystal orientation (111) face of the copper film. A crystal orientation of a copper thin film is controlled by irradiating a surface of a substrate with inert gas ions before forming a copper thin film on the substrate by a physical vapor deposition process. A copper thin film is formed by irradiating a surface of a substrate with ions, and depositing a copper thin film on the irradiated substrate. In the ion irradiating step, an ion irradiation energy for a dosage of the irradiated ions is controlled, so that crystal is greatly grown to be orientated in a direction of copper (111) face with a less dosage of the irradiated ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.