Method of shallow junction formation in semiconductor devices using gas immersion laser doping
US5316969A · kind A · utility
25Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1992 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Dec 21, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/129
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Shallow regions are formed in a semiconductor body by irradiating the surface region with a pulsed laser beam in an atmosphere including the dopant. The pulsed laser beam has sufficient intensity to drive in dopant atoms from the atmosphere but insufficient intensity to melt the semiconductor material. A silicide layer can be placed over the surface of the semiconductor material prior to irradiation with the dopant being driven from the atmosphere through the silicide into the surface region of the semiconductor body. Alternatively, the silicide layer can include dopant atoms prior to irradiating the surface region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.