Inventor · Sunnyvale, CA, US

Emi Ishida

40Patents
17h-index
31Co-inventors
77Inventor score

Filing activity: Dec 21, 1992 → Oct 7, 2002

Most-cited inventions

PatentTitleAreaCited byStatus
US6426279B1 Epitaxial delta doping for retrograde channel profile Electricity 138 Expired
US6444550B1 Laser tailoring retrograde channel profile in surfaces Emerging Cross-Sectional Technologies 126 Expired
US6506640B1 Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through Electricity 121 Expired
US6100171A Reduction of boron penetration by laser anneal removal of fluorine Electricity 57 Expired
US6051473A Fabrication of raised source-drain transistor devices Electricity 30 Expired
US5937325A Formation of low resistivity titanium silicide gates in semiconductor integrated circuits Electricity 28 Expired
US6344396B1 Removable spacer technology using ion implantation for forming asymmetric MOS transistors Electricity 27 Expired
US6756600B2 Ion implantation with improved ion source life expectancy Electricity 27 Expired
US5998272A Silicidation and deep source-drain formation prior to source-drain extension formation Electricity 26 Expired
US5316969A Method of shallow junction formation in semiconductor devices using gas immersion laser doping Emerging Cross-Sectional Technologies 25 Expired
US6403433B1 Source/drain doping technique for ultra-thin-body SOI MOS transistors Electricity 24 Expired
US6472283B1 MOS transistor processing utilizing UV-nitride removable spacer and HF etch Electricity 23 Expired
US6180468A Very low thermal budget channel implant process for semiconductors Electricity 23 Expired
US5885904A Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer Electricity 21 Expired
US5904575A Method and apparatus incorporating nitrogen selectively for differential oxide growth Emerging Cross-Sectional Technologies 19 Expired
US6040019A Method of selectively annealing damaged doped regions Electricity 19 Expired
US5966605A Reduction of poly depletion in semiconductor integrated circuits Electricity 18 Expired
US6190980A Method of tilted implant for pocket, halo and source/drain extension in ULSI dense structures Electricity 17 Expired
US6074937A End-of-range damage suppression for ultra-shallow junction formation Electricity 15 Expired
US6514833B1 Method of inhibiting lateral diffusion between adjacent wells by introducing carbon or fluorine ions into bottom of STI groove Electricity 15 Expired
US6475868B1 Oxygen implantation for reduction of junction capacitance in MOS transistors Electricity 13 Expired
US6143632A Deuterium doping for hot carrier reliability improvement Electricity 13 Expired
US6265291A Circuit fabrication method which optimizes source/drain contact resistance Electricity 13 Expired
US6455385B1 Semiconductor fabrication with multiple low dose implant Electricity 11 Expired
US6429083B1 Removable spacer technology using ion implantation to augment etch rate differences of spacer materials Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.