Ion source

US5317161A · kind A · utility

Assignee

• IMS Ionen Mikrofabrikations Systeme Gellschaft M.B.H. · AT

Inventors

• Alfred Chalupka · Wien, AT
• Gertraud Lammer · Wien, AT
• Gerhard Stengl · Villach, AT
• Peter Wolf · Tonawanda, US
• Johannes Fegerl · Wien, AT

Key dates

• Filing date: May 21, 1992
• Grant date: May 31, 1994
• Expiry date: May 21, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J37/12
• WIPO field: Electrical machinery, apparatus, energy
• WIPO sector: Electrical engineering

Abstract

In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.