Semiconductor light-emitting device with InGaAlp
US5317167A · kind A · utility
5Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1993 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | May 10, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
Abstract
A semiconductor light-emitting device comprises a light-emitting layer including a pn junction formed by a plurality of In.sub.x Ga.sub.y Al.sub.1-x-y P (0.ltoreq.x, y.ltoreq.1) layers, and a light-emitting-layer holding layer consisting of an indirect transition type Ga.sub.1-w Al.sub.w As (0.ltoreq.w.ltoreq.1) provided on an opposite side to a light-outputting side. The holding layer has a sufficiently small light absorption coefficient for the light from the light-emitting layer although its band gap is small and improves the light emission efficiency of the semiconductor light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.