Surface emission type semiconductor laser
US5317584A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1992 |
| Grant date | May 31, 1994 |
| Priority date | — |
| Expiry date | Dec 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/08
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portions. The II-VI group compound semiconductor layer is formed from an adduct consisting of II group organometallic compound and VI group organometallic compound and a VI group hydride by the use of a chemical vapor deposition. If a plurality of column-like portions are to be formed by a separation groove, these column-like portions are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.