Patterning of indium-tin oxide via selective reactive ion etching
US5318664A · kind A · utility
38Cited by
5References
37Claims
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Key dates
| Filing date | Nov 14, 1991 |
| Grant date | Jun 7, 1994 |
| Priority date | — |
| Expiry date | Nov 14, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Indium-tin oxide is selective etched relative to silicon, molybdenum, aluminum, titanium, silicon oxide and silicon nitride using an organic radical and oxygen containing plasma which contains sufficient oxygen to prevent deposition of undesirable films on non-etching portions of the component being etched and on the reactor surfaces. The plasma lacks halogenated gases. A minimum differential etch rate of 8:1 of indium-tin oxide to silicon results with the other materials etching slower than silicon or not at all.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.