Dry etching method
US5320707A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1993 |
| Grant date | Jun 14, 1994 |
| Priority date | — |
| Expiry date | May 20, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed from a gas mixture containing a halogen system gas (e.g., Cl.sub.2, HBr, BCl.sub.3, etc.) and a ROH gas (e.g., CH.sub.3 OH, C.sub.3 H.sub.5 OH, C.sub.5 H.sub.7 OH, CH.sub.3 COOH, HOCH.sub.2 CH.sub.2 OH, etc.). By incorporating the ROH gas with the halogen system gas, in etching, e.g., an aluminum system film structure, etching can be performed with an accurate shape corresponding to a mask pattern, irrespective of the pattern density. Moreover, the aluminum system film structure can be etched at a uniform speed irrespective of the pattern density; and a selection ratio for etching the aluminum system film structure, as compared with etching material (e.g., organic resist) of the mask, is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.