Light emitting device with double heterostructure
US5323027A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 1992 |
| Grant date | Jun 21, 1994 |
| Priority date | — |
| Expiry date | May 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
In a light emitting device comprising a first clad layer composed of a mixed crystal compound semiconductor of first type conductivity, an active layer composed of a mixed crystal compound semiconductor of first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength, and a second clad layer composed of a mixed crystal compound semiconductor of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer, the active layer is sandwiched by the first and second clad layers and forms the double hetero structure with the first and second clad layers, and the carrier concentration in the first clad layer near the junction with the active layer was made to be 5.times.10.sup.16 cm.sup.-3 or less. The carrier concentration in the active layer is preferably 1.times.10.sup.17 cm.sup.-3 or less, and the carrier concentration in the second clad layer is preferably 5.times.10.sup.16 cm.sup.-3 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.