Bi-directional MOSFET switch

US5323044A · kind A · utility

Assignee

• POWER INTEGRATIONS, INC. · US

Inventors

• Vladimir Rumennik · El Segundo, US
• Wayne B. Grabowski · Los Altos, US

Key dates

• Filing date: Oct 2, 1992
• Grant date: Jun 21, 1994
• Expiry date: Oct 2, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

A bi-directional switch includes a well region of a first conductivity type placed within a substrate. A first region of second conductivity type is placed within the well. A second contact region of second conductivity type is placed within the well. A drift region of second conductivity is placed between the first contact and the second contact. The drift region is separated from the first contact by a first channel region and is separated from the second contact by a second channel region. A first gate region is placed over the first channel region and a second gate region over the second channel region.