Wayne B. Grabowski
32Patents
20h-index
16Co-inventors
82Inventor score
Filing activity: Oct 2, 1992 → Apr 13, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6049108A | Trench-gated MOSFET with bidirectional voltage clamping | Electricity | 313 | Expired |
| US6239463A | Low resistance power MOSFET or other device containing silicon-germanium layer | Electricity | 204 | Expired |
| US6046470A | Trench-gated MOSFET with integral temperature detection diode | Electricity | 192 | Expired |
| US6078090A | Trench-gated Schottky diode with integral clamping diode | Electricity | 163 | Expired |
| US6291298A | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses | Electricity | 146 | Expired |
| US6413822B2 | Super-self-aligned fabrication process of trench-gate DMOS with overlying device layer | Electricity | 120 | Expired |
| US6140678A | Trench-gated power MOSFET with protective diode | Electricity | 60 | Expired |
| US6204533A | Vertical trench-gated power MOSFET having stripe geometry and high cell density | Electricity | 50 | Expired |
| US5323044A | Bi-directional MOSFET switch | Electricity | 48 | Expired |
| US6555883B1 | Lateral power MOSFET for high switching speeds | Electricity | 46 | Expired |
| US6072216A | Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6825536B2 | Lateral power MOSFET for high switching speeds | Electricity | 44 | Expired |
| US7115958B2 | Lateral power MOSFET for high switching speeds | Electricity | 43 | Expired |
| US5274259A | High voltage transistor | Electricity | 42 | Expired |
| US5411901A | Method of making high voltage transistor | Electricity | 38 | Expired |
| US6277695A | Method of forming vertical planar DMOSFET with self-aligned contact | Electricity | 33 | Expired |
| US7557406B2 | Segmented pillar layout for a high-voltage vertical transistor | Electricity | 32 | Active |
| US6268242A | Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact | Electricity | 30 | Expired |
| US6750507B2 | Super-self-aligned trench-gated DMOS with reduced on-resistance | Electricity | 23 | Expired |
| US6900100B2 | Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same | Electricity | 21 | Expired |
| US7816731B2 | Segmented pillar layout for a high-voltage vertical transistor | Electricity | 20 | Active |
| US6924198B2 | Self-aligned trench transistor using etched contact | Electricity | 20 | Expired |
| US7052963B2 | Method of forming trench transistor with chained implanted body including a plurality of implantation with different energies | Electricity | 19 | Expired |
| US6756274B2 | Fabrication process for a super-self-aligned trench-gated DMOS with reduced on-resistance | Electricity | 17 | Expired |
| US5998834A | Long channel trench-gated power MOSFET having fully depleted body region | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.