Method for forming CVD thin glass films
US5324539A · kind A · utility
14Cited by
3References
14Claims
0Family size
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Inventors
Key dates
| Filing date | Dec 16, 1992 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Dec 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a chemical vapor deposition film which is suitable for an interlevel insulator between Al and Al or an interlevel insulator between Al and a gate, and provides an improved chemical vapor deposition film suitable for mass production. An organic siloxane or alkoxysilane and an alkoxy compound of germanium are mixed in a vapor phase, and reacted with oxygen or ozone to thereby form a thin glass film composed of a two-component system of silicon oxide and germanium oxide on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.