Manufacturing method for bipolar transistor
US5324672A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1992 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Oct 23, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
Abstract
A bipolar transistor including a semiconductor layer formed on a semiconductor substrate; a base region formed at an upper portion of the semiconductor layer; a graft base region formed at the upper portion of the semiconductor layer so as to connect with a periphery of the base region; an emitter region formed at an upper portion of the base region; an offset insulating film formed on the base region around the emitter region; a collector buried region formed in the semiconductor layer below the base region; a collector drawn region formed in the semiconductor layer so as to connect with the collector buried region and be arranged on the side of the base region adjacent to an element isolating region; an emitter electrode formed on the offset insulating film so as to connect with the emitter region; an emitter insulating film formed so as to cover the emitter electrode; a base electrode formed so as to connect with the graft base region and contact with the emitter insulating film; and a collector electrode formed so as to connect with the collector drawn region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.