Light emitting diode with electro-chemically etched porous silicon

US5324965A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Michael F. Tompsett · New Providence, US
• Raphael Tsu · Huntersville, US

Key dates

• Filing date: Mar 26, 1993
• Grant date: Jun 28, 1994
• Expiry date: Mar 26, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

A light emitting diode comprising microporous silicon of one conductivity type forming a PN junction with silicon of the opposite conductivity type and electrodes respectively connected to said regions, at least one of the electrodes being transparent.