Turn off type semiconductor device, method of producing the same and the power conversion apparatus employing the same
US5324967A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 1991 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Aug 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
In a turn off type semiconductor device, an n-type emitter layer is divided into a plurality of elements by trenches. A silicide layer of a high melting point metal is provided on a p-type layer adjacent to the individual elements of the n-type emitter layer on a bottom of each of the trenches. A gate electrode is provided on the associated silicide layer so as to surround the plurality of elements of the n-type emitter layer obtained by the division of the emitter layer. An insulator is filled in each of the trenches dividing the n-type emitter layer surrounded by the gate electrode. A cathode electrode is provided on both the insulators and the n-type emitter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.