Method and electrode arrangement for inducing flat frequency modulation response in semiconductor laser
US5325382A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1991 |
| Grant date | Jun 28, 1994 |
| Priority date | — |
| Expiry date | Sep 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/06258
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In order to induce a flat frequency modulation response in a multi-electrode semiconductor laser which includes an active region and at least one phase control region with no active layer, a modulation current is applied to both of the active region and the phase control region. Further, an improved electrode arrangement for inducing a flat frequency modulation response in a multi-electrode semiconductor laser is present. The semiconductor laser includes three regions: an active region, a phase control region and a Bragg reflector region. Each of the active region, the phase control region and the Bragg reflector region being provided with an electrode for receiving an injection current, wherein the electrode provided for the active layer extends into the phase control region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.