Process for forming resist pattern
US5326670A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1991 |
| Grant date | Jul 5, 1994 |
| Priority date | — |
| Expiry date | Jun 7, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist composition for forming a upper resist layer and a process for forming a pattern thereby are disclosed. This resist comprises an azide compound and a polyacrylic copolymer of the following formula (1): ##STR1## wherein, R.sub.1 means CH.sub.3, CF.sub.3, CN, CH.sub.2 OH, or CH.sub.2 CO.sub.2 R, wherein R means an alkyl having 1 to 5 carbon atoms PA1 R.sub.2 means a hydrocarbon radical having at least one Si, PA1 R.sub.3 means OH, O--C(CH.sub.3).sub.3, NH.sub.2 , or NHCH.sub.2 OH, and, a ratio of n to m is more than 0 and is 1 or less than 1. Whereby a finely-resolved resist pattern is obtained by a preset process for forming the resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.