Method for making cusp-free anti-fuse structures
US5328865A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1993 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Jan 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making an anti-fuse structure characterized by the steps of forming a conductive base layer; forming an anti-fuse layer over the base layer; patterning the anti-fuse layer to form an anti-fuse island; forming an insulating layer over the anti-fuse island; forming a via hole through the insulating layer to the anti-fuse island; forming a conductive connection layer over the insulating layer and within the via hole; and patterning the conductive connection layer to form a conductive contact to the anti-fuse island. Preferably, the anti-fuse island comprises amorphous silicon which can optionally be covered with a thin layer of a titanium-tungsten alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.