Charged particle beam exposure method and apparatus
US5329130A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Aug 4, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31766
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A charged particle beam exposure method is used to draw a pattern on a substrate which is carried on a continuously moving stage by deflecting a charged particle beam. The method includes moving the stage in a direction parallel to an axis of a coordinate system of the substrate; generating first deflection data D.sub.1 in a coordinate system of the stage by obtaining a position coordinate of an reference position of a pattern region including the pattern to be drawn relative to a target position of the stage, and for obtaining second deflection data D.sub.2 in a coordinate system of the substrate describing a position coordinate of the pattern to be drawn from the reference position of the pattern region to which the pattern belongs; carrying out with respect to first deflection data D.sub.1 a first correcting operation including correction of pattern distortion inherent to a charged particle beam exposure apparatus, and for carrying out the first correcting operation and a second correcting operation with respect to second deflection data D.sub.2 after making a coordinate conversion to the coordinate system of the stage, where second correcting operation corrects a rotation error…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.