Short channel CMOS device capable of high performance at low voltage
US5329138A · kind A · utility
24Cited by
2References
8Claims
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Key dates
| Filing date | Jul 29, 1992 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Jul 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
Abstract
Herein disclosed is a CMOSFET, in which an n-channel MISFET Qn has a gate electrode 11n made of n-type polycrystalline silicon, in which a p-channel MISFET Qp has a gate electrode 11p made of p-type polycrystalline silicon, In which the n-channel MISFET Qn and the p-channel MISFET Qp have their respective channel regions formed with heavily doped impurity layers 12p and 12n having the conductivity types identical to those of their wells 3 and 2, and in which the individual heavily doped impurity layers 12p and 12n have their respective surfaces formed with counter-doped layers 13n and 13p having the opposite conductivity types.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.