Semiconductor diode
US5329151A · kind A · utility
1Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 1993 |
| Grant date | Jul 12, 1994 |
| Priority date | — |
| Expiry date | Apr 9, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/825
Abstract
The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.