Method of forming a high voltage silicon-on-sapphire photocell array
US5330918A · kind A · utility
20Cited by
12References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1992 |
| Grant date | Jul 19, 1994 |
| Priority date | — |
| Expiry date | Aug 31, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
Abstract
A method is provided for forming a multi-cell photovoltaic circuit on an insulating substrate, comprising the steps of: forming a photovoltaic junction between p-type and n-type layers in a silicon wafer; bonding the silicon wafer to an insulating substrate after forming the photovoltaic junction; patterning the silicon wafer to produce isolated photovoltaic cells; and electrically interconnecting the photovoltaic cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.