Patent · US Expired

Method for structuring a layer using a ring electrode and multiple RF power sources

US5332468A · kind A · utility

6Cited by

1References

19Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventor

Manfred Engelhardt · Feldkirchen-Westerham, DE

Key dates

Filing date	Sep 30, 1992
Grant date	Jul 26, 1994
Priority date	—
Expiry date	Sep 30, 2012

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/3348
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Method for structuring a layer. For structuring a layer that is arranged on a lower layer of a different material using a plasma etching process, a target (14) of the material of the lower layer is arranged in an etching reactor (1). The etching process is managed such that material is sputtered from the target (14) and is deposited on surfaces of the lower layer exposed in the etching process to essentially the same degree to which the lower layer is eroded by the etching process. The method is particularly suited for structuring a polysilicon layer that is arranged on a gate oxide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.